Hydrogen's role in generating free electrons in silicon finally explained

Researchers announced that they have achieved the world's first elucidation of how hydrogen produces free electrons through the interaction with certain defects in silicon. The achievement has the potential to improve how insulated gate bipolar transistors (IGBTs) are designed and manufactured, making them more efficient and reducing their power loss. It is also expected to open up possibilities for future devices using ultra-wide bandgap (UWBG) materials.